View TR8-800-70_1328765.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TR8 SERIES SILICON TRIACS
l l l l
8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
TR8-400-70 TR8-600-70 TR8-700-70 TR8-800-70
SYMBOL
VALUE 400 600 700 800 8 70 80 1 2.2 0.9 -40 to +110 -40 to +125 230
UNIT
Repetitive peak off-state voltage (see Note 1)
VDRM
V
Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 m s) Average gate power dissipation at (or below) 85C case temperature (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL
A A A A W W C C C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 320 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER IDRM Repetitive peak off-state current Peak gate trigger current VD = rated VDRM Vsupply = +12 V IGTM Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V Vsupply = +12 V VGTM Peak gate trigger voltage Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V All voltages are with respect to Main Terminal 1. TEST CONDITIONS IG = 0 RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W RL = 10 W TC = 110C tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s tp(g) > 20 m s 2 -12 -9 20 0.7 -0.8 -0.8 0.9 2 -2 -2 2 V MIN TYP MAX 2 50 -50 -50 mA UNIT mA
TR8 SERIES SILICON TRIACS
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER VTM IH IL dv/dt dv/dt(c) Peak on-state voltage Holding current Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage ITM = 12 A Vsupply = +12 V Vsupply = -12 V Vsupply = +12 V Vsupply = -12 V VDRM = Rated VDRM VDRM = Rated VDRM TEST CONDITIONS IG = 50 mA IG = 0 IG = 0 (see Note 7) IG = 0 ITRM = 12 A TC = 110C TC = 85C 5 100 (see Note 6) Init' ITM = 100 mA Init' ITM = -100 mA MIN TYP 1.6 5 -9 MAX 2.1 30 -30 50 -50 UNIT V mA mA V/s V/s
All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 W , tp(g) = 20 m s, tr = 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER Rq Rq
JC JA
MIN
TYP
MAX 1.8 62.5
UNIT C/W C/W
Junction to case thermal resistance Junction to free air thermal resistance
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT vs CASE TEMPERATURE
1000 Vsupply IGTM + + + + VAA = 12 V VGT - Gate Trigger Voltage - V RL = 10 W t p(g) = 20 s 10
GATE TRIGGER VOLTAGE vs CASE TEMPERATURE
Vsupply IGTM + + + + VAA = 12 V RL = 10 W t p(g) = 20 s
IGT - Gate Trigger Current - mA
100
10
1
1
0*1 -60
-40
-20
0
20
40
60
80
100
120
0*1 -60
-40
-20
0
20
40
60
80
100
120
TC - Case Temperature - C
TC - Case Temperature - C
Figure 1.
Figure 2.
TR8 SERIES SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT vs CASE TEMPERATURE
1000 Vsupply + IH - Holding Current - mA 100 VAA = 12 V VGF - Gate Forward Voltage - V IG = 0 Initiating ITM = 100 mA 10
GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT
1
10
0*1
1
0*1 -60
-40
-20
0
20
40
60
80
100
120
QUADRANT 1 0*01 0*0001 0*001
IA = 0 TC = 25 C 0*01 0*1 1
TC - Case Temperature - C
IGF - Gate Forward Current - A
Figure 3.
Figure 4.
LATCHING CURRENT vs CASE TEMPERATURE
1000 Vsupply IGTM + + 100 + + VAA = 12 V ITSM - Peak Full-Sine-Wave Current - A 100
SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION
TC 85 C
IL - Latching Current - mA
10
No Prior Device Conduction Gate Control Guaranteed
10
1 -60
-40
-20
0
20
40
60
80
100
120
1 1 10 100 1000 Consecutive 50-Hz Half-Sine-Wave Cycles
TC - Case Temperature - C
Figure 5.
Figure 6.
TR8 SERIES SILICON TRIACS
TYPICAL CHARACTERISTICS
MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE
P(av) - Maximum Average Power Dissipated - W 10 IT(RMS) - Maximum On-State Current - A 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature - C 32 28 24 20 16 12 8 4 0 0
MAX AVERAGE POWER DISSIPATED vs RMS ON-STATE CURRENT
TJ = 110 C Conduction Angle = 360 Above 8 A rms See ITSM Figure
2
4
6
8
10
12
14
16
IT(RMS) - RMS On-State Current - A
Figure 7.
Figure 8.
PARAMETER MEASUREMENT INFORMATION
VAC VAC
L1
ITRM IMT2 C1 50 Hz IMT2 VMT2 DUT RG R1 IG VMT2 dv/dt 63% IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. 10% VDRM
Figure 9.
TR8 SERIES SILICON TRIACS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.

▲Up To Search▲

Price & Availability of TR8-800-70

	To Download TR8-800-70 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .